采用热分解和电化学沉积相结合的方法,在p-Cu2O纳米棒上沉积n-Cu2O,制备了n-Cu2 O/p-Cu2O纳米棒复合结构.通过X射线衍射分析(XRD)、扫描电镜分析(SEM)和Mott-Schottky(MS)测试研究了样品的结构、形貌以及导电类型,使用光电流密度测试考察了样品的光电化学性能,并根据电化学阻抗测试(EIS)进行了机理分析.结果表明:沉积n-Cu2O之后样品的载流子分离-转移能力大幅提升,因此n-Cu2 O/p-Cu2O纳米棒复合结构表现出良好的光电化学性能.
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